1PCS MWE6IC9100NBR1 RF LDMOS Wideband Integrated Power Amplifiers

Description

Part No.  ：
MWE6IC9100NBR1
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Typical GSM Performance: VDD = 26 Volts, IDQ1 = 120 mA, IDQ2 = 950 mA, Pout = 100 Watts CW, f = 960 MHz
Power Gain: 33.5 dB
Power Added Efficiency: 54%
GSM EDGE Application
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 870 mA, Pout = 50 Watts Avg., Full Frequency Band (869–960 MHz)
Power Gain: 35.5 dB
Power Added Efficiency: 39%
Spectral Regrowth @ 400 kHz Offset = –63 dBc
Spectral Regrowth @ 600 kHz Offset = –81 dBc
EVM: 2% rms
Capable of Handling 10:1 VSWR, @ 32 Vdc, 960 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness
Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 1 mW to 120 W CW Pout.
Characterized with Series Equivalent Large–Signal Impedance Parameters and Common Source Scattering Parameters
On-Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
The MWE6IC9100NR1 and MWE6IC9100NBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 865 to 960 MHz. These multi-stage structures are rated for 26 to 32 Volt operation and cover all typical cellular base station modulation formats.
Maker      :  FREESCALE [Freescale Semiconductor, Inc]
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